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| Central TM PROCESS Semiconductor Corp. Bridge Rectifier CPD73 Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size Die Thickness Bonding Pad Area 1 (+DC) Bonding Pad Area 2 (AC) Bonding Pad Area 3 (-DC) Bonding Pad Area 4 (AC) Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMFBR-6F 25 x 25 MILS 6.0 MILS 3.0 x 3.0 MILS 3.0 x 7.0 MILS 3.0 x 4.0 MILS 3.0 x 7.0 MILS Al - 12,000A Au - 5,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (1-November 2004) Central TM PROCESS CPD73 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (1-November 2004) |
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